Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 119
The effect of post plasma treatment on the moisture absorption and dielectric
properties of SiOF films were carried out in terms of air exposure time . The
reliability test of Cu / TiN / SiOF / Si specimen was carried out in terms of
temperatures by ...
The effect of post plasma treatment on the moisture absorption and dielectric
properties of SiOF films were carried out in terms of air exposure time . The
reliability test of Cu / TiN / SiOF / Si specimen was carried out in terms of
temperatures by ...
Page 121
0 ) exposed to the atmosphere for 7 days before and after O2 plasma treatment
and Fig . 4 ( b ) shows the spectra more in detail in the range from 3000 to 4000
cm . In the film which received O2 plasma treatment , no appreciable peak
directly ...
0 ) exposed to the atmosphere for 7 days before and after O2 plasma treatment
and Fig . 4 ( b ) shows the spectra more in detail in the range from 3000 to 4000
cm . In the film which received O2 plasma treatment , no appreciable peak
directly ...
Page 122
Non - plasma treatment and 7 day exposure to atmosphere Si - O , H - OH Non -
plasma treatment SI - OH Absorbance ( arb . unit ) SI - OH O , plasma treatment
Wavenumber ( cm ' ) 4000 3600 3200 2800 2400 h 1000 400 3000 3200 3400 ...
Non - plasma treatment and 7 day exposure to atmosphere Si - O , H - OH Non -
plasma treatment SI - OH Absorbance ( arb . unit ) SI - OH O , plasma treatment
Wavenumber ( cm ' ) 4000 3600 3200 2800 2400 h 1000 400 3000 3200 3400 ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel