Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 12
Page 119
... plasma treatment on the moisture absorption and dielectric properties of SiOF films were carried out in terms of air exposure time . The reliability test of Cu / TiN / SiOF / Si specimen was carried out in terms of temperatures by RTA ...
... plasma treatment on the moisture absorption and dielectric properties of SiOF films were carried out in terms of air exposure time . The reliability test of Cu / TiN / SiOF / Si specimen was carried out in terms of temperatures by RTA ...
Page 122
Absorbance ( arb . unit ) SI - OH O , plasma treatment and 7 day exposure to atmosphere Non - plasma treatment and 7 day exposure to atmosphere Si - O Si - F H - OH Non - plasma treatment SI - OH O , plasma treatment 4000 3600 3200 2800 ...
Absorbance ( arb . unit ) SI - OH O , plasma treatment and 7 day exposure to atmosphere Non - plasma treatment and 7 day exposure to atmosphere Si - O Si - F H - OH Non - plasma treatment SI - OH O , plasma treatment 4000 3600 3200 2800 ...
Page 124
... plasma treatment on the moisture absorption and dielectric properties of SiOF films . Furthermore , the reliability of SiOF films for intermetal dielectrics in multilevel interconnections of ULSIS are investigated . The effect of post ...
... plasma treatment on the moisture absorption and dielectric properties of SiOF films . Furthermore , the reliability of SiOF films for intermetal dielectrics in multilevel interconnections of ULSIS are investigated . The effect of post ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber