Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 10
Page 18
... polarization , bottom : s - polarization . Arrows indicate positions of vibrational modes used for structural analysis ( see text ) . DISCUSSION Anisotropy can be determined by comparing absorbances for in- and out - of plane electric ...
... polarization , bottom : s - polarization . Arrows indicate positions of vibrational modes used for structural analysis ( see text ) . DISCUSSION Anisotropy can be determined by comparing absorbances for in- and out - of plane electric ...
Page 144
... polarization is the square of the refractive index . Here , we introduced the Kramers - Kronig relation in Eq . ( 1 ) to determine the contribution of the ionic polarization component to the dielectric constant of SiOF films . Thus , we ...
... polarization is the square of the refractive index . Here , we introduced the Kramers - Kronig relation in Eq . ( 1 ) to determine the contribution of the ionic polarization component to the dielectric constant of SiOF films . Thus , we ...
Page 145
... polarization , which is equal to the square of the refractive index , decreased with increasing CF , concentration , reaching a minimum value of 0.1-0.2 . Our Kramers - Kronig calculations show decreases in the dielectric constant from ...
... polarization , which is equal to the square of the refractive index , decreased with increasing CF , concentration , reaching a minimum value of 0.1-0.2 . Our Kramers - Kronig calculations show decreases in the dielectric constant from ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber