Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 3
... polishing ( CMP ) of low dielectric constant thin films and / or of SiO2 layers deposited above them is briefly discussed . Both subtractive metalization and damascene processes are included , and the required low dielectric constant ...
... polishing ( CMP ) of low dielectric constant thin films and / or of SiO2 layers deposited above them is briefly discussed . Both subtractive metalization and damascene processes are included , and the required low dielectric constant ...
Page 127
... Polishing ( CMP ) environment and compares those characteristics to undoped TEOS ( UTEOS ) , Thermal Oxide and Si ... polished ~ 10 % faster than the undoped PECVD oxide films . Their composition was slightly changed after CMP as can be ...
... Polishing ( CMP ) environment and compares those characteristics to undoped TEOS ( UTEOS ) , Thermal Oxide and Si ... polished ~ 10 % faster than the undoped PECVD oxide films . Their composition was slightly changed after CMP as can be ...
Page 128
... polished using an OnTrak Systems LPT Chemical Mechanical Polisher using a one - step CMP process . A KOH based ( Cabot SS - 12 ) slurry with Rodel IC - 1000 pads was used for polishing . A nominal target of 3000 Å was removed from all ...
... polished using an OnTrak Systems LPT Chemical Mechanical Polisher using a one - step CMP process . A KOH based ( Cabot SS - 12 ) slurry with Rodel IC - 1000 pads was used for polishing . A nominal target of 3000 Å was removed from all ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber