Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 6
... polymer films , such as methylsilsesquioxanes [ 14 ] . - An attribute related to the anisotropy inherent in polyimides ( including fluorinated polyimides ) is the presence of a high in - plane storage modulus . In some cases ...
... polymer films , such as methylsilsesquioxanes [ 14 ] . - An attribute related to the anisotropy inherent in polyimides ( including fluorinated polyimides ) is the presence of a high in - plane storage modulus . In some cases ...
Page 35
... polymer dielectric derived from tris - perfluorocyclobutene ( PFCB ) monomer has been investigated as a thin film ... films after curing at 300 ° C . This paper describes the processing and properties of films derived from PFCB , and ...
... polymer dielectric derived from tris - perfluorocyclobutene ( PFCB ) monomer has been investigated as a thin film ... films after curing at 300 ° C . This paper describes the processing and properties of films derived from PFCB , and ...
Page 165
... films ( a - C : F ) for use as low - dielectric - constant interlayer dielectrics were deposited by helicon - wave ... polymer films were limited by the monomers synthesized by chemical reaction before the formation of the films . On the ...
... films ( a - C : F ) for use as low - dielectric - constant interlayer dielectrics were deposited by helicon - wave ... polymer films were limited by the monomers synthesized by chemical reaction before the formation of the films . On the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber