Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 65
Page 35
... polymerization process of PFCB , a fluorinated aromatic thermosetting polymer . The dielectric constant of PFCB at 2.35 is well below the range of competing polymer dielectrics . This feature makes PFCB an attractive dielectric for use ...
... polymerization process of PFCB , a fluorinated aromatic thermosetting polymer . The dielectric constant of PFCB at 2.35 is well below the range of competing polymer dielectrics . This feature makes PFCB an attractive dielectric for use ...
Page 41
FLUOROCARBON FILMS FROM PLASMA POLYMERIZATION OF HEXAFLUOROPROPYLENE AND HYDROGEN T. W. Mountsier and D. Kumar Novellus Systems , Inc. , 3970 N. First Street , San ... Polymerization Hexafluoropropylene and Hydrogen T W Mountsier and D Kumar.
FLUOROCARBON FILMS FROM PLASMA POLYMERIZATION OF HEXAFLUOROPROPYLENE AND HYDROGEN T. W. Mountsier and D. Kumar Novellus Systems , Inc. , 3970 N. First Street , San ... Polymerization Hexafluoropropylene and Hydrogen T W Mountsier and D Kumar.
Page 48
... polymer , it is important that the polymer contain reactive functionality which becomes chemically incorporated into ... polymerization around 5 based on the number average molecular weight and is soluble in a variety of common organic ...
... polymer , it is important that the polymer contain reactive functionality which becomes chemically incorporated into ... polymerization around 5 based on the number average molecular weight and is soluble in a variety of common organic ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber