Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 91
... pore size and narrow pore size distribution and also because of higher density . The trade - offs between density , mechanical strength and dielectric constant for these types of porous solids will be elucidated . The known properties ...
... pore size and narrow pore size distribution and also because of higher density . The trade - offs between density , mechanical strength and dielectric constant for these types of porous solids will be elucidated . The known properties ...
Page 97
... pores which cause shrinkage during drying . During drying a gel will shrink until the matrix strength is strong enough to resist the pore fluid capillary pressure . This change in strength typically follows a power law with an exponent ...
... pores which cause shrinkage during drying . During drying a gel will shrink until the matrix strength is strong enough to resist the pore fluid capillary pressure . This change in strength typically follows a power law with an exponent ...
Page 105
... pore shrinkage during drying . Mesoporous ( 2-200 nm diameter pores ) silica films formed by a surfactant template - based process are promising for ILD applications because ( 1 ) high porosity can be introduced in the silica structure ...
... pore shrinkage during drying . Mesoporous ( 2-200 nm diameter pores ) silica films formed by a surfactant template - based process are promising for ILD applications because ( 1 ) high porosity can be introduced in the silica structure ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber