Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 93
... precursor rheology , reaction chemistry and processing conditions , the film thickness may be limited to approximately one micron or the film will crack ... PRECURSOR CHEMISTRY The precursors employed in the synthesis of nanoporous. 93 95.
... precursor rheology , reaction chemistry and processing conditions , the film thickness may be limited to approximately one micron or the film will crack ... PRECURSOR CHEMISTRY The precursors employed in the synthesis of nanoporous. 93 95.
Page 94
PRECURSOR CHEMISTRY The precursors employed in the synthesis of nanoporous silica are similar or the same as those used for SOG's and may include alkoxysilanes such as tetraethoxysilane ( TEOS ) and alkylalkoxysilanes such as ...
PRECURSOR CHEMISTRY The precursors employed in the synthesis of nanoporous silica are similar or the same as those used for SOG's and may include alkoxysilanes such as tetraethoxysilane ( TEOS ) and alkylalkoxysilanes such as ...
Page 159
... precursor . As can be seen , FDLC films deposited from pure fluorocarbon have dielectric constants below 2.8 . Dilution of the precursor increases the dielectric constant of the films , most probably as a result of the incorporation of ...
... precursor . As can be seen , FDLC films deposited from pure fluorocarbon have dielectric constants below 2.8 . Dilution of the precursor increases the dielectric constant of the films , most probably as a result of the incorporation of ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber