Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 21
... present data on deposition characteristics , film composition and purity , thermal stability as well as preliminary electrical data . INTRODUCTION As gate widths shrink below 0.25 μm and the number of metal levels increases above 5 ...
... present data on deposition characteristics , film composition and purity , thermal stability as well as preliminary electrical data . INTRODUCTION As gate widths shrink below 0.25 μm and the number of metal levels increases above 5 ...
Page 68
... present in the ketocarbene formed from the polymers 14 , which probably stabilizes the 1,3- dipolar structure by its electron withdrawing effect as well as hyperconjugation . A strong indica- tion of this decomposition pathway is the ...
... present in the ketocarbene formed from the polymers 14 , which probably stabilizes the 1,3- dipolar structure by its electron withdrawing effect as well as hyperconjugation . A strong indica- tion of this decomposition pathway is the ...
Page 157
... presents the dependence of the index of refraction of DLC films on the investigated deposition parameters , shows that ... present work is presented in Figure 4. It can be seen that the compressive stress in the films can be reduced from ...
... presents the dependence of the index of refraction of DLC films on the investigated deposition parameters , shows that ... present work is presented in Figure 4. It can be seen that the compressive stress in the films can be reduced from ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber