Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 81
... produced during the plasma deposition are thermally activated to react with air to produce chemical groups capable of reaction with copper . In fact , formation of C - O - Cu and C - N - Cu chemical linkages at the Cu / fluoropolymer ...
... produced during the plasma deposition are thermally activated to react with air to produce chemical groups capable of reaction with copper . In fact , formation of C - O - Cu and C - N - Cu chemical linkages at the Cu / fluoropolymer ...
Page 193
... produced good fits ( Figure 3 ) , indicating that some dangling bonds are eliminated during the off time . Both ... produce dangling bonds . In addition , there are ~ 1015 surface sites / cm2 , and thus , only 1 x 10-5 of the sites have ...
... produced good fits ( Figure 3 ) , indicating that some dangling bonds are eliminated during the off time . Both ... produce dangling bonds . In addition , there are ~ 1015 surface sites / cm2 , and thus , only 1 x 10-5 of the sites have ...
Page 199
... produced at intermediate temperatures . SUMMARY We have presented a study of the influence of the cure temperature on the properties of hydrogen silsesquioxane SOG . Though time and ambient remained fixed characteristic changes were ...
... produced at intermediate temperatures . SUMMARY We have presented a study of the influence of the cure temperature on the properties of hydrogen silsesquioxane SOG . Though time and ambient remained fixed characteristic changes were ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber