Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 15
... properties comparable to their spin cast counterparts . Although electrical , mechanical and thermal properties of spin cast PMDA - ODA polyimide films have been studied extensively 3 , these properties are usually measured only in a ...
... properties comparable to their spin cast counterparts . Although electrical , mechanical and thermal properties of spin cast PMDA - ODA polyimide films have been studied extensively 3 , these properties are usually measured only in a ...
Page 71
... properties have made it an attractive material as ILD in microelectronic applications . These excellent properties of the film can be obtained only when the polyimide film is completely imidized . A partially imidized polyimide film ...
... properties have made it an attractive material as ILD in microelectronic applications . These excellent properties of the film can be obtained only when the polyimide film is completely imidized . A partially imidized polyimide film ...
Page 85
... properties " . This work , however , reported the properties of PTFE films 0.001 " ( 25.4 μm ) and thicker . Recently , preliminary properties have been reported for sub - micron PTFE films spin - coat deposited from a PTFE nanoemulsion ...
... properties " . This work , however , reported the properties of PTFE films 0.001 " ( 25.4 μm ) and thicker . Recently , preliminary properties have been reported for sub - micron PTFE films spin - coat deposited from a PTFE nanoemulsion ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber