Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 3
For some candidates , drawbacks related to material properties such as poor
thermal stability or electrical performance have ... An attempt is made to correlate
structure / property relationships in these materials with their relative attributes
and ...
For some candidates , drawbacks related to material properties such as poor
thermal stability or electrical performance have ... An attempt is made to correlate
structure / property relationships in these materials with their relative attributes
and ...
Page 15
INTRODUCTION Because of its excellent thermal , mechanical and electrical
properties , polyimide has received wide use in microelectronics as a dielectric
material . Commercial polyimides for microelectronics applications are provided
as ...
INTRODUCTION Because of its excellent thermal , mechanical and electrical
properties , polyimide has received wide use in microelectronics as a dielectric
material . Commercial polyimides for microelectronics applications are provided
as ...
Page 71
These properties have made it an attractive material as ILD in microelectronic
applications . These excellent properties of the film can be obtained only when
the polyimide film is completely imidized . A partially imidized polyimide film
usually ...
These properties have made it an attractive material as ILD in microelectronic
applications . These excellent properties of the film can be obtained only when
the polyimide film is completely imidized . A partially imidized polyimide film
usually ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel