Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 108
In the CTAC - templated films , analogous phases with varying surfactant
concentrations ( CTAC / TEOS ratio ) may exist . The different ordered phases are
difficult to characterize by the diffraction technique , however , because structural
...
In the CTAC - templated films , analogous phases with varying surfactant
concentrations ( CTAC / TEOS ratio ) may exist . The different ordered phases are
difficult to characterize by the diffraction technique , however , because structural
...
Page 121
2 The plot of dielectric constant of SiOF films as a function of gas flow ratio vs .
refractive index The surface topography of the SiOF films with various SiF4 / 02
flow ratios is shown in Fig . 3 . The surface roughness of the SiOF films increased
...
2 The plot of dielectric constant of SiOF films as a function of gas flow ratio vs .
refractive index The surface topography of the SiOF films with various SiF4 / 02
flow ratios is shown in Fig . 3 . The surface roughness of the SiOF films increased
...
Page 184
For deposition temperatures from 275 - 350°C using 100 % SiF4 flow in the
Novellus HDPCVD reactor , we varied the Si - F / Si - O ratio from 8 to 16 % . The
fluorine in the 100 % SiF4 - based films was unstable , particularly during 400°C
...
For deposition temperatures from 275 - 350°C using 100 % SiF4 flow in the
Novellus HDPCVD reactor , we varied the Si - F / Si - O ratio from 8 to 16 % . The
fluorine in the 100 % SiF4 - based films was unstable , particularly during 400°C
...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |