Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 108
... ratio ) may exist . The different ordered phases are difficult to characterize by the diffraction technique , however , because structural information can be lost due to orientation within the film . At low concentrations , the ...
... ratio ) may exist . The different ordered phases are difficult to characterize by the diffraction technique , however , because structural information can be lost due to orientation within the film . At low concentrations , the ...
Page 121
... ratio 1.38 1.40 1.42 1.44 1.46 1.48 1.50 1.52 Refractive Index Fig . 2 The plot of dielectric constant vs. refractive index The surface topography of the SiOF films with various SiF4 / O2 flow ratios is shown in Fig . 3 . The surface ...
... ratio 1.38 1.40 1.42 1.44 1.46 1.48 1.50 1.52 Refractive Index Fig . 2 The plot of dielectric constant vs. refractive index The surface topography of the SiOF films with various SiF4 / O2 flow ratios is shown in Fig . 3 . The surface ...
Page 184
... ratio yielded approximately 3 % Si - F / Si - O ratio . After optimization , 3 % Si - F / Si - O ratio HDPCVD FSG films on 200mm wafers with thickness and fluorine uniformities under 4 % and 0.2 atomic percent were obtained ...
... ratio yielded approximately 3 % Si - F / Si - O ratio . After optimization , 3 % Si - F / Si - O ratio HDPCVD FSG films on 200mm wafers with thickness and fluorine uniformities under 4 % and 0.2 atomic percent were obtained ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber