Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 39
... reaction between the PFCB and the underlying Ta . DISCUSSION The vacuum deposition of Ta and Ti onto the PFCB surface creates an interface between the metals , with chemical activity equal to 1 and oxidation state 0 , and the polymer ...
... reaction between the PFCB and the underlying Ta . DISCUSSION The vacuum deposition of Ta and Ti onto the PFCB surface creates an interface between the metals , with chemical activity equal to 1 and oxidation state 0 , and the polymer ...
Page 63
... reaction conditions similar to those used most commonly for amor- phous , soluble poly ( arylene ether ) s . Optimized reaction conditions for monomers 3 are : N , N ' - di- methylpropylene urea ( DMPU ) as solvent , toluene for ...
... reaction conditions similar to those used most commonly for amor- phous , soluble poly ( arylene ether ) s . Optimized reaction conditions for monomers 3 are : N , N ' - di- methylpropylene urea ( DMPU ) as solvent , toluene for ...
Page 167
... reaction due to CFx ions also occurs simultaneously with the a - C : F film deposition , and that the etching reaction is enhanced by a bias voltage . This suggests that the deposition rate at the top edge of the wiring may be reduced ...
... reaction due to CFx ions also occurs simultaneously with the a - C : F film deposition , and that the etching reaction is enhanced by a bias voltage . This suggests that the deposition rate at the top edge of the wiring may be reduced ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber