Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page vii
... reaction 4.7. Michael addition/Mannich reaction 362 4.8. Ugi-4CR/Wittig reaction 362 4.9. Ugi/Smiles coupling 363 4.10. Ugi-Smiles coupling/intramolecular Diels-Alder cycloaddition 365 4.11. Ugi/aza-Wittig reaction 365 4.12. Ugi four ...
... reaction 4.7. Michael addition/Mannich reaction 362 4.8. Ugi-4CR/Wittig reaction 362 4.9. Ugi/Smiles coupling 363 4.10. Ugi-Smiles coupling/intramolecular Diels-Alder cycloaddition 365 4.11. Ugi/aza-Wittig reaction 365 4.12. Ugi four ...
Page 10
... reaction . In this book alkali content will mean acid - soluble alkali , unless otherwise stated . In order of magnitude , the three measures are : water ... REACTION Alkali-aggregate reaction Alkali-silica reaction Alkali-silicate reaction.
... reaction . In this book alkali content will mean acid - soluble alkali , unless otherwise stated . In order of magnitude , the three measures are : water ... REACTION Alkali-aggregate reaction Alkali-silica reaction Alkali-silicate reaction.
Page 34
... reaction such as the chlorination of methane to methyl chloride: CH4 + Cl2 → CH3Cl + HCl (R2) Understanding the ... reaction rate. Chemical. Reaction. Engineering. Reduction of Complex Reactions Stoichiometry of Simple and Complex Reactions.
... reaction such as the chlorination of methane to methyl chloride: CH4 + Cl2 → CH3Cl + HCl (R2) Understanding the ... reaction rate. Chemical. Reaction. Engineering. Reduction of Complex Reactions Stoichiometry of Simple and Complex Reactions.
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber