Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 39
... reaction between the PFCB and the underlying Ta . DISCUSSION The vacuum deposition of Ta and Ti onto the PFCB surface creates an interface between the metals , with chemical activity equal to 1 and oxidation state 0 , and the polymer ...
... reaction between the PFCB and the underlying Ta . DISCUSSION The vacuum deposition of Ta and Ti onto the PFCB surface creates an interface between the metals , with chemical activity equal to 1 and oxidation state 0 , and the polymer ...
Page 63
... reaction conditions similar to those used most commonly for amor- phous , soluble poly ( arylene ether ) s . Optimized reaction conditions for monomers 3 are : N , N ' - di- methylpropylene urea ( DMPU ) as solvent , toluene for ...
... reaction conditions similar to those used most commonly for amor- phous , soluble poly ( arylene ether ) s . Optimized reaction conditions for monomers 3 are : N , N ' - di- methylpropylene urea ( DMPU ) as solvent , toluene for ...
Page 167
... reaction due to CFx ions also occurs simultaneously with the a - C : F film deposition , and that the etching reaction is enhanced by a bias voltage . This suggests that the deposition rate at the top edge of the wiring may be reduced ...
... reaction due to CFx ions also occurs simultaneously with the a - C : F film deposition , and that the etching reaction is enhanced by a bias voltage . This suggests that the deposition rate at the top edge of the wiring may be reduced ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films