Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 163
... reduce the SiDLC etching rate in oxygen plasma . Based on these XPS results we speculate that the 3 % Si concentration ... reduced by about a factor of 17 and the dielectric constant increased by about 30 % . CONCLUSIONS Hydrogenated and ...
... reduce the SiDLC etching rate in oxygen plasma . Based on these XPS results we speculate that the 3 % Si concentration ... reduced by about a factor of 17 and the dielectric constant increased by about 30 % . CONCLUSIONS Hydrogenated and ...
Page 167
... reduced by 300 ° C annealing in a vacuum , but that of the C4Fg film was not . However , the dielectric constant of the C4F8 films ( 2.3 ) was slightly higher than that of the CF4 film ( 2.1 ) . This indicates that there may be a trade ...
... reduced by 300 ° C annealing in a vacuum , but that of the C4Fg film was not . However , the dielectric constant of the C4F8 films ( 2.3 ) was slightly higher than that of the CF4 film ( 2.1 ) . This indicates that there may be a trade ...
Page 186
... reduced from 1.44μm to 1.08μm , the BEOL RC increase can be significantly reduced if the AlCu thickness is kept constant . The simulated data also show that the overall BEOL RC can be decreased by increasing the line width , at the cost ...
... reduced from 1.44μm to 1.08μm , the BEOL RC increase can be significantly reduced if the AlCu thickness is kept constant . The simulated data also show that the overall BEOL RC can be decreased by increasing the line width , at the cost ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films