Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 163
... reduce the SiDLC etching rate in oxygen plasma . Based on these XPS results we speculate that the 3 % Si concentration ... reduced by about a factor of 17 and the dielectric constant increased by about 30 % . CONCLUSIONS Hydrogenated and ...
... reduce the SiDLC etching rate in oxygen plasma . Based on these XPS results we speculate that the 3 % Si concentration ... reduced by about a factor of 17 and the dielectric constant increased by about 30 % . CONCLUSIONS Hydrogenated and ...
Page 167
... reduced by 300 ° C annealing in a vacuum , but that of the C4Fg film was not . However , the dielectric constant of the C4F8 films ( 2.3 ) was slightly higher than that of the CF4 film ( 2.1 ) . This indicates that there may be a trade ...
... reduced by 300 ° C annealing in a vacuum , but that of the C4Fg film was not . However , the dielectric constant of the C4F8 films ( 2.3 ) was slightly higher than that of the CF4 film ( 2.1 ) . This indicates that there may be a trade ...
Page 186
... reduced from 1.44μm to 1.08μm , the BEOL RC increase can be significantly reduced if the AlCu thickness is kept constant . The simulated data also show that the overall BEOL RC can be decreased by increasing the line width , at the cost ...
... reduced from 1.44μm to 1.08μm , the BEOL RC increase can be significantly reduced if the AlCu thickness is kept constant . The simulated data also show that the overall BEOL RC can be decreased by increasing the line width , at the cost ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber