Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 94
... relative concentrations of the two groups and their reactivity . The microstructure of silica gel produced using reactions # 1-4 is a complex function of the concentrations of each reaction species , as well as the reaction conditions ...
... relative concentrations of the two groups and their reactivity . The microstructure of silica gel produced using reactions # 1-4 is a complex function of the concentrations of each reaction species , as well as the reaction conditions ...
Page 186
... relative dielectric constant for stable FSG films appears to be 3.5 . PECVD SiO2 has a relative dielectric constant of 4.1 - 4.2 and , if the line pitch and width is kept constant , then FSG decreases the BEOL RC delay by 13 % . If the ...
... relative dielectric constant for stable FSG films appears to be 3.5 . PECVD SiO2 has a relative dielectric constant of 4.1 - 4.2 and , if the line pitch and width is kept constant , then FSG decreases the BEOL RC delay by 13 % . If the ...
Page 196
... relative film shrinkage [ % ] -10 -5 O -20 20 O ...... low - k regime o 1.48 1500 1.46 1.44 dashed lines are guides to the eye 1.42 1.40 1.38 300 400 500 600 700 800 1.36 900 cure temperature [ ° C ] Fig.1 Relative film shrinkage and ...
... relative film shrinkage [ % ] -10 -5 O -20 20 O ...... low - k regime o 1.48 1500 1.46 1.44 dashed lines are guides to the eye 1.42 1.40 1.38 300 400 500 600 700 800 1.36 900 cure temperature [ ° C ] Fig.1 Relative film shrinkage and ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber