Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 94
However , to modify reactivity of the silane , transesterification may be employed
to replace some of the alkoxy groups with a more or less labile group . The extent
of this replacement depends upon the relative concentrations of the two groups ...
However , to modify reactivity of the silane , transesterification may be employed
to replace some of the alkoxy groups with a more or less labile group . The extent
of this replacement depends upon the relative concentrations of the two groups ...
Page 186
Based on our results and previously published work , the minimum relative
dielectric constant for stable FSG films appears to be 3 . 5 . PECVD SiO2 has a
relative dielectric constant of 4 . 1 - 4 . 2 and , if the line pitch and width is kept
constant ...
Based on our results and previously published work , the minimum relative
dielectric constant for stable FSG films appears to be 3 . 5 . PECVD SiO2 has a
relative dielectric constant of 4 . 1 - 4 . 2 and , if the line pitch and width is kept
constant ...
Page 196
46 relative filmstrinlege [ % ] refractive index 2001 DHF vet etch rate ( Amin )
dashed lines are guides to the eye 1 . 40 1 . 38 300 LLLLLLLL 136 400 500 600
700 800 900 are temperature [ °C ] 300 400 700 800 500 600 cure temperatu
900 ...
46 relative filmstrinlege [ % ] refractive index 2001 DHF vet etch rate ( Amin )
dashed lines are guides to the eye 1 . 40 1 . 38 300 LLLLLLLL 136 400 500 600
700 800 900 are temperature [ °C ] 300 400 700 800 500 600 cure temperatu
900 ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |