Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 69
... removed under reduced pressure , and 2.74 g ( 17 mmol ) of the desired ketocarbene 10. ( quantitative , m.p .: decomposition above 50 ° C ) Monomer 3a : A solution of 19.8 g ( 163 mmol ) of 4 - fluorobenzoyl nitrile and 7 ml of BF3 Et2O ...
... removed under reduced pressure , and 2.74 g ( 17 mmol ) of the desired ketocarbene 10. ( quantitative , m.p .: decomposition above 50 ° C ) Monomer 3a : A solution of 19.8 g ( 163 mmol ) of 4 - fluorobenzoyl nitrile and 7 ml of BF3 Et2O ...
Page 117
... removed . The maximum decrease in es from removal of these groups is about than about 6 % of dε = εs - Ɛop ( ≈ 4.1 - 2.1 ≈ 2 ) or ~ 0.12 , whereas the reported decrease in ɛs is at least 0.8 . This zeroth order calculation actually ...
... removed . The maximum decrease in es from removal of these groups is about than about 6 % of dε = εs - Ɛop ( ≈ 4.1 - 2.1 ≈ 2 ) or ~ 0.12 , whereas the reported decrease in ɛs is at least 0.8 . This zeroth order calculation actually ...
Page 129
... Removal Rate A comparison between the CMP removal rate of undoped oxide films ( Thermal oxide and PECVD TEOS ) and fluorine doped films , with and without a silicon - rich capping layer , was evaluated . The CMP rate of Thermal Oxide ...
... Removal Rate A comparison between the CMP removal rate of undoped oxide films ( Thermal oxide and PECVD TEOS ) and fluorine doped films , with and without a silicon - rich capping layer , was evaluated . The CMP rate of Thermal Oxide ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber