Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 8
Page 54
... % PMDA - 3F / PSSQ which showed severe " orange peeling " effect as determined by Auger spectroscopy . Light areas = high elemental composition ; dark areas depleted elemental composition . = T 60 55 50 45 Residual Thin Film Stress (. 54 ...
... % PMDA - 3F / PSSQ which showed severe " orange peeling " effect as determined by Auger spectroscopy . Light areas = high elemental composition ; dark areas depleted elemental composition . = T 60 55 50 45 Residual Thin Film Stress (. 54 ...
Page 55
T 60 55 50 45 Residual Thin Film Stress ( MPa ) T ( a ) ( b ) T 13.3μm 13.3μm Figure 7. Surface SEM pictures of a 1 μm film of 23 % PMDA - 3F / PSSQ cured with ( a ) and without ( b ) base . PMDA - 3F / PSSQ ( 17 % PI ) > PMDA - 3F ...
T 60 55 50 45 Residual Thin Film Stress ( MPa ) T ( a ) ( b ) T 13.3μm 13.3μm Figure 7. Surface SEM pictures of a 1 μm film of 23 % PMDA - 3F / PSSQ cured with ( a ) and without ( b ) base . PMDA - 3F / PSSQ ( 17 % PI ) > PMDA - 3F ...
Page 65
... residual stress / relaxation etc. ) . High glass transition temperatures are desired for dielectrics applications , since less residual stress in a polymeric interlayer dielectric can be expected , when the material does not experience ...
... residual stress / relaxation etc. ) . High glass transition temperatures are desired for dielectrics applications , since less residual stress in a polymeric interlayer dielectric can be expected , when the material does not experience ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber