Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 119
... resistance and capacitance increase . In advanced logic devices , the stack of interlayer dielectrics has increased to five or six layers . [ 2 ~ 6 ] In sub - half micron interconnection , the requirements for interlayer dielectric film ...
... resistance and capacitance increase . In advanced logic devices , the stack of interlayer dielectrics has increased to five or six layers . [ 2 ~ 6 ] In sub - half micron interconnection , the requirements for interlayer dielectric film ...
Page 185
... resistance vias . Table II . Via resistance distributions for integrated wafer lots showing median ( 50 % ) and either 90th or 98th percentile ( 90 / 98 % ) values . The data was normalized to the median via resistance of the SiO2 ...
... resistance vias . Table II . Via resistance distributions for integrated wafer lots showing median ( 50 % ) and either 90th or 98th percentile ( 90 / 98 % ) values . The data was normalized to the median via resistance of the SiO2 ...
Page 186
... resistance shifts for various IMD materials showing the initial resistance distributions and the fractional resistance increase over time . Figure 3. Log - normal electromigration data taken at 200 ° C and 106 amp / cm2 on 1.1um - pitch ...
... resistance shifts for various IMD materials showing the initial resistance distributions and the fractional resistance increase over time . Figure 3. Log - normal electromigration data taken at 200 ° C and 106 amp / cm2 on 1.1um - pitch ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films