Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 119
... resistance and capacitance increase . In advanced logic devices , the stack of interlayer dielectrics has increased to five or six layers . [ 2 ~ 6 ] In sub - half micron interconnection , the requirements for interlayer dielectric film ...
... resistance and capacitance increase . In advanced logic devices , the stack of interlayer dielectrics has increased to five or six layers . [ 2 ~ 6 ] In sub - half micron interconnection , the requirements for interlayer dielectric film ...
Page 185
... resistance vias . Table II . Via resistance distributions for integrated wafer lots showing median ( 50 % ) and either 90th or 98th percentile ( 90 / 98 % ) values . The data was normalized to the median via resistance of the SiO2 ...
... resistance vias . Table II . Via resistance distributions for integrated wafer lots showing median ( 50 % ) and either 90th or 98th percentile ( 90 / 98 % ) values . The data was normalized to the median via resistance of the SiO2 ...
Page 186
... resistance shifts for various IMD materials showing the initial resistance distributions and the fractional resistance increase over time . Figure 3. Log - normal electromigration data taken at 200 ° C and 106 amp / cm2 on 1.1um - pitch ...
... resistance shifts for various IMD materials showing the initial resistance distributions and the fractional resistance increase over time . Figure 3. Log - normal electromigration data taken at 200 ° C and 106 amp / cm2 on 1.1um - pitch ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber