Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 80
... RF power was about 250 W. For PP films , C2F3H or C2F4 monomers were used at the same flow as for sputtering but with an RF power of about 20 W. The AF1600 solution was diluted in Fluorinert Sigma FC - 77 , and spin - deposited . The ...
... RF power was about 250 W. For PP films , C2F3H or C2F4 monomers were used at the same flow as for sputtering but with an RF power of about 20 W. The AF1600 solution was diluted in Fluorinert Sigma FC - 77 , and spin - deposited . The ...
Page 147
... rf power . A substrate temperature of 100 ° C was insufficient to excite the radicals , compared with 200 and 300 ° C . When CF , was added , the deposition rate also increased with increasing temperature at an rf power of Sticking ...
... rf power . A substrate temperature of 100 ° C was insufficient to excite the radicals , compared with 200 and 300 ° C . When CF , was added , the deposition rate also increased with increasing temperature at an rf power of Sticking ...
Page 157
... power and decreasing pressure . The dielectric constant ( k ) of a material is generally correlated to its index of ... RF power and with decreasing deposition pressure , indicating a similar trend for k . This trend is verified by the ...
... power and decreasing pressure . The dielectric constant ( k ) of a material is generally correlated to its index of ... RF power and with decreasing deposition pressure , indicating a similar trend for k . This trend is verified by the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber