Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 80
... RF power was about 250 W. For PP films , C2F3H or C2F4 monomers were used at the same flow as for sputtering but with an RF power of about 20 W. The AF1600 solution was diluted in Fluorinert Sigma FC - 77 , and spin - deposited . The ...
... RF power was about 250 W. For PP films , C2F3H or C2F4 monomers were used at the same flow as for sputtering but with an RF power of about 20 W. The AF1600 solution was diluted in Fluorinert Sigma FC - 77 , and spin - deposited . The ...
Page 147
... rf power . A substrate temperature of 100 ° C was insufficient to excite the radicals , compared with 200 and 300 ° C . When CF , was added , the deposition rate also increased with increasing temperature at an rf power of Sticking ...
... rf power . A substrate temperature of 100 ° C was insufficient to excite the radicals , compared with 200 and 300 ° C . When CF , was added , the deposition rate also increased with increasing temperature at an rf power of Sticking ...
Page 157
... power and decreasing pressure . The dielectric constant ( k ) of a material is generally correlated to its index of ... RF power and with decreasing deposition pressure , indicating a similar trend for k . This trend is verified by the ...
... power and decreasing pressure . The dielectric constant ( k ) of a material is generally correlated to its index of ... RF power and with decreasing deposition pressure , indicating a similar trend for k . This trend is verified by the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films