Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 72
... sample pan crimper . A small amount of sample is preferred for obtaining maximum sensitivity and increasing the efficiency of heat transfer from the sample to its thermocouple . Less than 10 mg of the polyamic acid specimen was used for ...
... sample pan crimper . A small amount of sample is preferred for obtaining maximum sensitivity and increasing the efficiency of heat transfer from the sample to its thermocouple . Less than 10 mg of the polyamic acid specimen was used for ...
Page 161
... sample S3 , as - deposited and after several etching times . The spectrum of the as - deposited sample can be fitted to a layer of 880 nm containing Si in a ratio of Si / ( Si + C ) = 3 % . It is clear from the Fig . 10 that the ...
... sample S3 , as - deposited and after several etching times . The spectrum of the as - deposited sample can be fitted to a layer of 880 nm containing Si in a ratio of Si / ( Si + C ) = 3 % . It is clear from the Fig . 10 that the ...
Page 162
... samples S5 , as - deposited and after etching for different times . The more interesting and somewhat surprising observation in Fig . 11 is that , contrary to expectations , no oxygen peak or Si enrichment can be detected in sample S5 ...
... samples S5 , as - deposited and after etching for different times . The more interesting and somewhat surprising observation in Fig . 11 is that , contrary to expectations , no oxygen peak or Si enrichment can be detected in sample S5 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber