Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 144
... sccm 50 sccm 100 sccm Si - F stretching 150 sccm 400 600 800 1000 1200 1400 1600 Wave Number [ cm - 1 ] Fig . 1 FT - IR spectra change of silicon oxide film by fluorine addition at 30W and 300 ° C . 12 10 lonic + Electronic polarization ...
... sccm 50 sccm 100 sccm Si - F stretching 150 sccm 400 600 800 1000 1200 1400 1600 Wave Number [ cm - 1 ] Fig . 1 FT - IR spectra change of silicon oxide film by fluorine addition at 30W and 300 ° C . 12 10 lonic + Electronic polarization ...
Page 146
... sccm ε = 4.7 Милли SiH4 / N2O / Ar = 1/50/150 sccm ε = 4.2 ~ 4.4 increase in dielectric constant . Murase reported a linear relationship between the concentration of Si - OH groups and polarization in SiO , films formed by TEOS / O ...
... sccm ε = 4.7 Милли SiH4 / N2O / Ar = 1/50/150 sccm ε = 4.2 ~ 4.4 increase in dielectric constant . Murase reported a linear relationship between the concentration of Si - OH groups and polarization in SiO , films formed by TEOS / O ...
Page 147
... sccm of CF4 flow rate , ( b ) 50 sccm and ( c ) 100 sccm . The step coverage was almost unity beyond 100 sccm of CF1 flow rate . 0.8 0.6 50 0.4 20 0.2 1 20W , CF40 sccm 30W , CF40 sccm 40W , CF4 = 0 sccm 20W , CF4150 sccm 30W , CF4 = 150 ...
... sccm of CF4 flow rate , ( b ) 50 sccm and ( c ) 100 sccm . The step coverage was almost unity beyond 100 sccm of CF1 flow rate . 0.8 0.6 50 0.4 20 0.2 1 20W , CF40 sccm 30W , CF40 sccm 40W , CF4 = 0 sccm 20W , CF4150 sccm 30W , CF4 = 150 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber