Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 117
between es and eo is the contribution from the vibrational modes and is shown in Fig . 5 ( b ) . As the partial charge of the Si atom increases , the contribution of the vibrational modes to es decreases . The contribution of the ...
between es and eo is the contribution from the vibrational modes and is shown in Fig . 5 ( b ) . As the partial charge of the Si atom increases , the contribution of the vibrational modes to es decreases . The contribution of the ...
Page 161
... Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer ...
... Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer ...
Page 168
... shown in Fig . 5 . The gap - filling property was dramatically improved by the application of a 30 - W bias power , and the over - hangs were successfully eliminated , as shown in Fig . 6. Furthermore , the 0.35 - μm gaps were ...
... shown in Fig . 5 . The gap - filling property was dramatically improved by the application of a 30 - W bias power , and the over - hangs were successfully eliminated , as shown in Fig . 6. Furthermore , the 0.35 - μm gaps were ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films