Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Results 1-3 of 22
Page 117
between es and eo is the contribution from the vibrational modes and is shown in Fig . 5 ( b ) . As the partial charge of the Si atom increases , the contribution of the vibrational modes to es decreases . The contribution of the ...
between es and eo is the contribution from the vibrational modes and is shown in Fig . 5 ( b ) . As the partial charge of the Si atom increases , the contribution of the vibrational modes to es decreases . The contribution of the ...
Page 161
... Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer ...
... Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer ...
Page 168
... shown in Fig . 5 . The gap - filling property was dramatically improved by the application of a 30 - W bias power , and the over - hangs were successfully eliminated , as shown in Fig . 6. Furthermore , the 0.35 - μm gaps were ...
... shown in Fig . 5 . The gap - filling property was dramatically improved by the application of a 30 - W bias power , and the over - hangs were successfully eliminated , as shown in Fig . 6. Furthermore , the 0.35 - μm gaps were ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber