Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Results 1-3 of 49
Page 95
... shown in Figure 4 but one could also add a catalyst to decrease the gel time as shown in Figure 5. For those experiments , the solids content was maintained at 5 % and no solvent evaporation was involved . Therefore , the effects of ...
... shown in Figure 4 but one could also add a catalyst to decrease the gel time as shown in Figure 5. For those experiments , the solids content was maintained at 5 % and no solvent evaporation was involved . Therefore , the effects of ...
Page 97
... shown in Figure 10. As necks continue to grow , the microstructure changes from a spherical to a cylindrical morphology . Continued aging yields coalescence into coarser microstructure with reduced strength . The steps illustrated in Figure ...
... shown in Figure 10. As necks continue to grow , the microstructure changes from a spherical to a cylindrical morphology . Continued aging yields coalescence into coarser microstructure with reduced strength . The steps illustrated in Figure ...
Page 161
... Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer ...
... Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber