Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 95
... shown in Figure 4 but one could also add a catalyst to decrease the gel time as shown in Figure 5. For those experiments , the solids content was maintained at 5 % and no solvent evaporation was involved . Therefore , the effects of ...
... shown in Figure 4 but one could also add a catalyst to decrease the gel time as shown in Figure 5. For those experiments , the solids content was maintained at 5 % and no solvent evaporation was involved . Therefore , the effects of ...
Page 97
... shown in Figure 10. As necks continue to grow , the microstructure changes from a spherical to a cylindrical morphology . Continued aging yields coalescence into coarser microstructure with reduced strength . The steps illustrated in Figure ...
... shown in Figure 10. As necks continue to grow , the microstructure changes from a spherical to a cylindrical morphology . Continued aging yields coalescence into coarser microstructure with reduced strength . The steps illustrated in Figure ...
Page 161
... Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer ...
... Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films