Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 141
... shows IR absorption spectra of the film deposited with TICS / He / O2 and SiF4 . Absorption peak of OH bonds does not appear in the spectrum as for as- deposited film , and even after exposing to the air for 14 days . This means that ...
... shows IR absorption spectra of the film deposited with TICS / He / O2 and SiF4 . Absorption peak of OH bonds does not appear in the spectrum as for as- deposited film , and even after exposing to the air for 14 days . This means that ...
Page 145
... shows the dielectric constant calculated by Kramers - Kronig relation . 4 Figure 3 shows the dielectric constants obtained by C - V measurements and Kramers - Kronig relation . The relative dielectric constant of the SiOF films ...
... shows the dielectric constant calculated by Kramers - Kronig relation . 4 Figure 3 shows the dielectric constants obtained by C - V measurements and Kramers - Kronig relation . The relative dielectric constant of the SiOF films ...
Page 161
... shows that the Si concentration increases in the surface layer of the SiDLC film with increasing etching time and can clearly be seen after 10 min . of etching . The Si enrichment of the surface layer is correlated with the formation ...
... shows that the Si concentration increases in the surface layer of the SiDLC film with increasing etching time and can clearly be seen after 10 min . of etching . The Si enrichment of the surface layer is correlated with the formation ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber