Low-Dielectric Constant Materials II:H. Treichel, A. C. Jones, A. Lagendijk, K. Uram Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material. |
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Results 1-3 of 60
Page 141
Figure 10 shows IR absorption spectra of the film deposited with TICS/He/O2 and
S1F4. Absorption peak of OH bonds does not appear in the spectrum as for as-
deposited film, and even after exposing to the air for 14 days. This means that the
...
Figure 10 shows IR absorption spectra of the film deposited with TICS/He/O2 and
S1F4. Absorption peak of OH bonds does not appear in the spectrum as for as-
deposited film, and even after exposing to the air for 14 days. This means that the
...
Page 145
Figure 2 shows the dielectric constant calculated by Kramers-Kronig relation.
Figure 3 shows the dielectric constants obtained by C-V measurements and
Kramers-Kronig relation. The relative dielectric constant of the SiOF films
decreased with ...
Figure 2 shows the dielectric constant calculated by Kramers-Kronig relation.
Figure 3 shows the dielectric constants obtained by C-V measurements and
Kramers-Kronig relation. The relative dielectric constant of the SiOF films
decreased with ...
Page 161
This behavior is as originally expected, but shows that while 3% Si in SiDLC can
slow down the etching, it is insufficient to stop it even after etching through 400
nm of SiDLC. A higher Si concentration is therefore required for an etch-stop
layer.
This behavior is as originally expected, but shows that while 3% Si in SiDLC can
slow down the etching, it is insufficient to stop it even after etching through 400
nm of SiDLC. A higher Si concentration is therefore required for an etch-stop
layer.
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Contents
towDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low eR Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
a-C:F film adhesion alloy ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking CTAC/TEOS cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing indicates integrated interface ISBN low dielectric constant low-k Materials Research Society measured mechanical metal moisture absorption monomers Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene parylene AF-4 peak PECVD PFCB Phys planarization plasma polyimide polyimide film polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance rf power sample semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spectroscopy spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer xerogel
Bibliographic information
| Title | Low-Dielectric Constant Materials II: Volume 443 of Materials Research Society Symposia Proceedings, Materials Research Society Symposia Proceedings |
| Editors | H. Treichel, A. C. Jones, A. Lagendijk, K. Uram |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Length | 203 pages |
| Subjects | › Technology & Engineering / Materials Science Technology & Engineering / Superconductors & Superconductivity |
| Export Citation | BiBTeX EndNote RefMan |