Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 141
Figure 10 shows IR absorption spectra of the film deposited with TICS / He / O2
and SiF4 . Absorption peak of OH bonds does not appear in the spectrum as for
asdeposited film , and even after exposing to the air for 14 days . This means that
...
Figure 10 shows IR absorption spectra of the film deposited with TICS / He / O2
and SiF4 . Absorption peak of OH bonds does not appear in the spectrum as for
asdeposited film , and even after exposing to the air for 14 days . This means that
...
Page 145
Figure 2 shows the dielectric constant calculated by Kramers - Kronig relation .
Figure 3 shows the dielectric constants obtained by C - V measurements and O ε
measured from C - V characteristics Kramers - Kronig relation . The o e
calculated ...
Figure 2 shows the dielectric constant calculated by Kramers - Kronig relation .
Figure 3 shows the dielectric constants obtained by C - V measurements and O ε
measured from C - V characteristics Kramers - Kronig relation . The o e
calculated ...
Page 161
This behavior is as originally expected , but shows that while 3 % Si in SiDLC can
slow down the etching , it is insufficient to stop it even after etching through 400
nm of SiDLC . A higher Si concentration is therefore required for an etch - stop ...
This behavior is as originally expected , but shows that while 3 % Si in SiDLC can
slow down the etching , it is insufficient to stop it even after etching through 400
nm of SiDLC . A higher Si concentration is therefore required for an etch - stop ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |