Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 91
NANOPOROUS SILICA FOR LOW K DIELECTRICS Teresa Ramos , Kevin Roderick , Alok Maskara , and Douglas M. Smith Nanoglass LLC , 3500 Garrett Ave. , Santa Clara , CA 95054-2827 , USA ABSTRACT Considerable progress has been made in ...
NANOPOROUS SILICA FOR LOW K DIELECTRICS Teresa Ramos , Kevin Roderick , Alok Maskara , and Douglas M. Smith Nanoglass LLC , 3500 Garrett Ave. , Santa Clara , CA 95054-2827 , USA ABSTRACT Considerable progress has been made in ...
Page 92
... silica parameter controlling properties of importance for dielectrics ' . Properties of nanoporous silica may be varied over a continuous spectrum from the extremes of an air gap at a porosity of 100 % to dense silica with a porosity of ...
... silica parameter controlling properties of importance for dielectrics ' . Properties of nanoporous silica may be varied over a continuous spectrum from the extremes of an air gap at a porosity of 100 % to dense silica with a porosity of ...
Page 105
... silica films were prepared by condensation of a silicate network around surfactant micellar structures . Adherent , porous films 0.5-1.0 μm in thickness , and containing an ordered assemblage of ≈2 nm diameter pores were synthesized by ...
... silica films were prepared by condensation of a silicate network around surfactant micellar structures . Adherent , porous films 0.5-1.0 μm in thickness , and containing an ordered assemblage of ≈2 nm diameter pores were synthesized by ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber