Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 104
SiO2 film . The underlying porous silica film maintained its porosity . The etchability of xerogel films was also established . Silica xerogel films with 75 % porosity etched five ( 5 ) times faster than PETEOS under CF4 / O2 plasma ...
SiO2 film . The underlying porous silica film maintained its porosity . The etchability of xerogel films was also established . Silica xerogel films with 75 % porosity etched five ( 5 ) times faster than PETEOS under CF4 / O2 plasma ...
Page 105
... silica films were prepared by condensation of a silicate network around surfactant micellar structures . Adherent , porous films 0.5-1.0 μm in thickness , and containing an ordered assemblage of ≈2 nm diameter pores were synthesized by ...
... silica films were prepared by condensation of a silicate network around surfactant micellar structures . Adherent , porous films 0.5-1.0 μm in thickness , and containing an ordered assemblage of ≈2 nm diameter pores were synthesized by ...
Page 108
... silica films is expected . With increasing concentration of cetyltrimethylammonium bromide ( CTAB ) with temperature , Auvray et al . [ 11 ] observed a sequence of transitions from micellar , hexagonal , monoclinic , cubic to lamellar ...
... silica films is expected . With increasing concentration of cetyltrimethylammonium bromide ( CTAB ) with temperature , Auvray et al . [ 11 ] observed a sequence of transitions from micellar , hexagonal , monoclinic , cubic to lamellar ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films