Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 46
Page 42
... silicon dioxide and silicon nitride films [ 12 , 13 ] . The rf voltage on the showerhead was measured using a high voltage probe for both single frequency ( SF ) - 13.56 MHz only - and DF operation - 13.56 MHz + 350 kHz . At 13.56 MHz ...
... silicon dioxide and silicon nitride films [ 12 , 13 ] . The rf voltage on the showerhead was measured using a high voltage probe for both single frequency ( SF ) - 13.56 MHz only - and DF operation - 13.56 MHz + 350 kHz . At 13.56 MHz ...
Page 52
... silicon - rich and fluorine poor ( see Figure 6 ) . Conversely , the valleys show the opposite elemental composition variation ( i.e. , fluorine rich and silicon poor ) . In this case , the topology is apparently caused by phase ...
... silicon - rich and fluorine poor ( see Figure 6 ) . Conversely , the valleys show the opposite elemental composition variation ( i.e. , fluorine rich and silicon poor ) . In this case , the topology is apparently caused by phase ...
Page 203
... silicon - oxygen , 3 , 41 , 85 , 189 RC delay , 183 cobalt , 35 copper , 79 Cu / Ti / SiOF / Si , 119 depolymerization , 71 dielectric constant , 3 , 21 , 47 , 59 , 71 , 85 , 91 , 105 , 111 , 127 , 137 , 155 , 171 , 189 properties , 79 ...
... silicon - oxygen , 3 , 41 , 85 , 189 RC delay , 183 cobalt , 35 copper , 79 Cu / Ti / SiOF / Si , 119 depolymerization , 71 dielectric constant , 3 , 21 , 47 , 59 , 71 , 85 , 91 , 105 , 111 , 127 , 137 , 155 , 171 , 189 properties , 79 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films