Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 42
... silicon dioxide and silicon nitride films [ 12 , 13 ] . The rf voltage on the showerhead was measured using a high voltage probe for both single frequency ( SF ) - 13.56 MHz only - and DF operation - 13.56 MHz + 350 kHz . At 13.56 MHz ...
... silicon dioxide and silicon nitride films [ 12 , 13 ] . The rf voltage on the showerhead was measured using a high voltage probe for both single frequency ( SF ) - 13.56 MHz only - and DF operation - 13.56 MHz + 350 kHz . At 13.56 MHz ...
Page 52
... silicon - rich and fluorine poor ( see Figure 6 ) . Conversely , the valleys show the opposite elemental composition variation ( i.e. , fluorine rich and silicon poor ) . In this case , the topology is apparently caused by phase ...
... silicon - rich and fluorine poor ( see Figure 6 ) . Conversely , the valleys show the opposite elemental composition variation ( i.e. , fluorine rich and silicon poor ) . In this case , the topology is apparently caused by phase ...
Page 203
... silicon - oxygen , 3 , 41 , 85 , 189 RC delay , 183 cobalt , 35 copper , 79 Cu / Ti / SiOF / Si , 119 depolymerization , 71 dielectric constant , 3 , 21 , 47 , 59 , 71 , 85 , 91 , 105 , 111 , 127 , 137 , 155 , 171 , 189 properties , 79 ...
... silicon - oxygen , 3 , 41 , 85 , 189 RC delay , 183 cobalt , 35 copper , 79 Cu / Ti / SiOF / Si , 119 depolymerization , 71 dielectric constant , 3 , 21 , 47 , 59 , 71 , 85 , 91 , 105 , 111 , 127 , 137 , 155 , 171 , 189 properties , 79 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber