Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page vi
... Silicon Oxide Films Formed by ECRCVD With SiF4 and O2 Gases Seoghyeong Lee , Jae - Yoon Yoo , and Jong - Wan Park Characterization of PECVD - Deposited Fluorosilicate Glass ( FSG ) After CMP and Cleaning .. D. Mordo , I. Goswami , I.J. ...
... Silicon Oxide Films Formed by ECRCVD With SiF4 and O2 Gases Seoghyeong Lee , Jae - Yoon Yoo , and Jong - Wan Park Characterization of PECVD - Deposited Fluorosilicate Glass ( FSG ) After CMP and Cleaning .. D. Mordo , I. Goswami , I.J. ...
Page 47
... silicon oxide with new intermetal dielectrics ( IMD ) having dielectric constants lower than conventional oxide ( k = 3.9-4.2 ) .24 This is not a simple matter given the complexities and demands of current semiconductor integration ...
... silicon oxide with new intermetal dielectrics ( IMD ) having dielectric constants lower than conventional oxide ( k = 3.9-4.2 ) .24 This is not a simple matter given the complexities and demands of current semiconductor integration ...
Page 119
... silicon oxide films were deposited using an ECR plasma CVD system ( AsTeX Model AX4505 ) which consisted of two chambers , a plasma generation chamber and a reaction chamber . The plasma chamber , which was connected with a rectangular ...
... silicon oxide films were deposited using an ECR plasma CVD system ( AsTeX Model AX4505 ) which consisted of two chambers , a plasma generation chamber and a reaction chamber . The plasma chamber , which was connected with a rectangular ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber