Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 53
... silicon wafers and cured to 400 ° C for 1-2 hrs . After cooling the samples to room temperature , the film stresses were measured from the curvature of the wafer at various temperatures using a Flexus apparatus . The tensile stress of ...
... silicon wafers and cured to 400 ° C for 1-2 hrs . After cooling the samples to room temperature , the film stresses were measured from the curvature of the wafer at various temperatures using a Flexus apparatus . The tensile stress of ...
Page 88
... wafer processing . In this test , a silicon wafer is coated as follows : 1um SiO2 , 1 μm PTFE , and 1μm SiO2 . The ... Wafers that passed the thermal shock test had a stud pull test value of less than 100 psi . We have conducted limited ...
... wafer processing . In this test , a silicon wafer is coated as follows : 1um SiO2 , 1 μm PTFE , and 1μm SiO2 . The ... Wafers that passed the thermal shock test had a stud pull test value of less than 100 psi . We have conducted limited ...
Page 106
... silicon wafers ( Silicon Source ) were used . The wafer pretreatment included sonication in deionized water , followed by soaking overnight in a solution of sulfuric acid and Nochromix TM ( Godax Labs ) and finally rinsing with ...
... silicon wafers ( Silicon Source ) were used . The wafer pretreatment included sonication in deionized water , followed by soaking overnight in a solution of sulfuric acid and Nochromix TM ( Godax Labs ) and finally rinsing with ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber