Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 29
... similar deposition conditions show a similar stress vs. temperature behavior . Thermally cycling other samples a third time yields stress vs. temperature graphs which are identical to that shown for the second anneal cycle . This ...
... similar deposition conditions show a similar stress vs. temperature behavior . Thermally cycling other samples a third time yields stress vs. temperature graphs which are identical to that shown for the second anneal cycle . This ...
Page 159
... similar to the DLC films with k > 3.3 , showing an increase of about 5 ± 3 % in thickness after annealing . The same films have less than half the internal stresses of the corresponding DLC films with similar thermal behavior . These ...
... similar to the DLC films with k > 3.3 , showing an increase of about 5 ± 3 % in thickness after annealing . The same films have less than half the internal stresses of the corresponding DLC films with similar thermal behavior . These ...
Page 161
... similar conditions . For the 5 % Si / ( Si + C ) S5 film , this corresponds to an etch rate selectivity of 17 : 1 . Figure 10 presents the RBS spectra of sample S3 , as - deposited and after several etching times . The spectrum of the ...
... similar conditions . For the 5 % Si / ( Si + C ) S5 film , this corresponds to an etch rate selectivity of 17 : 1 . Figure 10 presents the RBS spectra of sample S3 , as - deposited and after several etching times . The spectrum of the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber