Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 69
... solution of 5 g ( 23 mmol ) of N - methyl - N - nitroso - 4 - toluene sulfonamide ( DIA- ZALDĀ® ) in 50 ml of diethyl ... Solid State Technology 7/1995 , 117 ( 1995 ) ; and references cited therein 2 . S. P. Murarka , Solid State ...
... solution of 5 g ( 23 mmol ) of N - methyl - N - nitroso - 4 - toluene sulfonamide ( DIA- ZALDĀ® ) in 50 ml of diethyl ... Solid State Technology 7/1995 , 117 ( 1995 ) ; and references cited therein 2 . S. P. Murarka , Solid State ...
Page 105
... solution containing tetraethyl orthosilicate ( TEOS ) and a cationic ... solid surfaces [ 5-8 ] , and at air - water interfaces [ 9 ] . In film ... solid surfaces in contact with silica - surfactant solutions . The above techniques ...
... solution containing tetraethyl orthosilicate ( TEOS ) and a cationic ... solid surfaces [ 5-8 ] , and at air - water interfaces [ 9 ] . In film ... solid surfaces in contact with silica - surfactant solutions . The above techniques ...
Page 108
... solid curve is the expected volume fraction based on the volume contributions of the silica and the surfactant in the precursor solution , after taking into account the shrinkage on calcination , which was measured by shifts in the ...
... solid curve is the expected volume fraction based on the volume contributions of the silica and the surfactant in the precursor solution , after taking into account the shrinkage on calcination , which was measured by shifts in the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber