Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 69
... solution of 19.8 g ( 163 mmol ) of 4 - fluorobenzoyl nitrile and 7 ml of BF3 Et2O in 200 ml of dry dichloromethane is cooled to 0 ° C . A solution of 2.68 g ( 16.3 mmol ) ketocarbene 10 in 20 ml dry dichloromethane is added dropwise ...
... solution of 19.8 g ( 163 mmol ) of 4 - fluorobenzoyl nitrile and 7 ml of BF3 Et2O in 200 ml of dry dichloromethane is cooled to 0 ° C . A solution of 2.68 g ( 16.3 mmol ) ketocarbene 10 in 20 ml dry dichloromethane is added dropwise ...
Page 105
... solution was metered onto a spinning substrate in a solvent - saturated atmosphere to avoid drying . The spin - coating solution was allowed to gel and then supercritically dried . Xerogel films for microelectronic applications were ...
... solution was metered onto a spinning substrate in a solvent - saturated atmosphere to avoid drying . The spin - coating solution was allowed to gel and then supercritically dried . Xerogel films for microelectronic applications were ...
Page 106
... solution of sulfuric acid and Nochromix TM ( Godax Labs ) and finally rinsing with deionized water and drying . Spin - coating solutions were prepared by combining tetraethyl orthosilicate ( TEOS ) ( Aldrich ) , ethanol ( punctilious ...
... solution of sulfuric acid and Nochromix TM ( Godax Labs ) and finally rinsing with deionized water and drying . Spin - coating solutions were prepared by combining tetraethyl orthosilicate ( TEOS ) ( Aldrich ) , ethanol ( punctilious ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber