Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 95
... solvent evaporation ( note : low initial solids contents are required to yield good planarization and gapfill ) . This decreases the time required for gelation as shown in Figure 4 but one could also add a catalyst to decrease the gel ...
... solvent evaporation ( note : low initial solids contents are required to yield good planarization and gapfill ) . This decreases the time required for gelation as shown in Figure 4 but one could also add a catalyst to decrease the gel ...
Page 96
... solvent in the surrounding air ) , 4 ) the practical necessity of performing deposition at ambient temperatures , and 5 ) the relative volatility and high diffusion constants of common solvents in air . Even if one is attempting to make ...
... solvent in the surrounding air ) , 4 ) the practical necessity of performing deposition at ambient temperatures , and 5 ) the relative volatility and high diffusion constants of common solvents in air . Even if one is attempting to make ...
Page 97
... solvent in the pores during aging . The solvent affects both the equilibrium solubility and rate of dissolution of silica which are directly related to aging kinetics . In general , aging is very slow with aprotic solvents and more ...
... solvent in the pores during aging . The solvent affects both the equilibrium solubility and rate of dissolution of silica which are directly related to aging kinetics . In general , aging is very slow with aprotic solvents and more ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber