Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 119
... specimen was carried out in terms of temperatures by RTA in N2 ambient . After O2 plasma treatment , no appreciable peak directly related to moisture absorption was detected . The C - V characteristics of the O2 plasma treated SiOF film ...
... specimen was carried out in terms of temperatures by RTA in N2 ambient . After O2 plasma treatment , no appreciable peak directly related to moisture absorption was detected . The C - V characteristics of the O2 plasma treated SiOF film ...
Page 124
specimen annealed at 700 ° C in Fig . 8. Nevertheless , TiN layer had a good job in inhibiting the Si and F out - diffusion up to the annealing temperature of 600 ° C . as - dep . 01 C1 ΤΗ N1 Cu1 Si1 F1 Si2 500 ° C 01 Ti1 N1 Cu1 F1 Si2 ...
specimen annealed at 700 ° C in Fig . 8. Nevertheless , TiN layer had a good job in inhibiting the Si and F out - diffusion up to the annealing temperature of 600 ° C . as - dep . 01 C1 ΤΗ N1 Cu1 Si1 F1 Si2 500 ° C 01 Ti1 N1 Cu1 F1 Si2 ...
Page 198
... specimen annealed at 475 ° C the situation is already different . Although the hydrogen begins to desorb at about the same temperature , the silane peak is reduced by more than an order of magnitude . Some water ( apart from a normal ...
... specimen annealed at 475 ° C the situation is already different . Although the hydrogen begins to desorb at about the same temperature , the silane peak is reduced by more than an order of magnitude . Some water ( apart from a normal ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber