Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 23
... spectra . The ESCA data were referenced to a F1 , binding energy of 689.1 eV . The C1 , and F1 , ESCA spectra for the as - deposited Parylene AF - 4 film are given in Figure 3 and Figure 4. The C1 , spectra showed a peak at 291.47 eV ...
... spectra . The ESCA data were referenced to a F1 , binding energy of 689.1 eV . The C1 , and F1 , ESCA spectra for the as - deposited Parylene AF - 4 film are given in Figure 3 and Figure 4. The C1 , spectra showed a peak at 291.47 eV ...
Page 72
... spectra were recorded in a transmission mode . All spectra were taken at 2 wave number resolution and represent the accumulation of 256 scans prior to the Fourier transform . The bare silicon substrate was measured first and stored for ...
... spectra were recorded in a transmission mode . All spectra were taken at 2 wave number resolution and represent the accumulation of 256 scans prior to the Fourier transform . The bare silicon substrate was measured first and stored for ...
Page 140
... spectra of the film deposited with O2 dilution . 3.4 Film deposition with O2 addition 410 405 400 395 300 295 290 285 280 Binding energy ( eV ) Fig.9 C ( 1s ) and N ( 1s ) regions of XPS spectra measured on the films deposited with and ...
... spectra of the film deposited with O2 dilution . 3.4 Film deposition with O2 addition 410 405 400 395 300 295 290 285 280 Binding energy ( eV ) Fig.9 C ( 1s ) and N ( 1s ) regions of XPS spectra measured on the films deposited with and ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber