Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 15
... spin cast onto an appropriate substrate . Then , a thermal curing process is used to drive off the solvent and initiate imide ring closure which produces the insoluble polyimide . The resultant spin coated films are inherently ...
... spin cast onto an appropriate substrate . Then , a thermal curing process is used to drive off the solvent and initiate imide ring closure which produces the insoluble polyimide . The resultant spin coated films are inherently ...
Page 105
... spin - coating water / ethanol - based solutions containing a silica precursor and surfactant template . In this paper , film deposition conditions are described , and film thickness , porosity , refractive index and dielectric constant ...
... spin - coating water / ethanol - based solutions containing a silica precursor and surfactant template . In this paper , film deposition conditions are described , and film thickness , porosity , refractive index and dielectric constant ...
Page 106
... Spin - coating solutions were prepared by combining tetraethyl orthosilicate ( TEOS ) ( Aldrich ) , ethanol ... Coating System Model P - 6204A spin coater was used for film deposition . The silica coated wafer was post - treated ...
... Spin - coating solutions were prepared by combining tetraethyl orthosilicate ( TEOS ) ( Aldrich ) , ethanol ... Coating System Model P - 6204A spin coater was used for film deposition . The silica coated wafer was post - treated ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber