Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 88
... strength of the interface , then delamination can occur . The test is limited in that it essentially has no tensile component and it is not quantitative . In addition , it ... Strength Dielectric strength ( leakage current ) for a 88.
... strength of the interface , then delamination can occur . The test is limited in that it essentially has no tensile component and it is not quantitative . In addition , it ... Strength Dielectric strength ( leakage current ) for a 88.
Page 93
... strength , and delamination ( see middle example , Fig . 2 ) . This precludes the use of the Ambient Pressure Aerogel ( APA ) approach which uses surface modification to allow gel shrinkage during drying but enables springback to yield ...
... strength , and delamination ( see middle example , Fig . 2 ) . This precludes the use of the Ambient Pressure Aerogel ( APA ) approach which uses surface modification to allow gel shrinkage during drying but enables springback to yield ...
Page 97
... strength . The steps illustrated in Figure 10 yield a continuous drop in surface area and increase in pore size . The rate of aging may be accelerated by both thermal and chemical means . The time required to achieve maximum strength ...
... strength . The steps illustrated in Figure 10 yield a continuous drop in surface area and increase in pore size . The rate of aging may be accelerated by both thermal and chemical means . The time required to achieve maximum strength ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films