Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 88
... strength of the interface , then delamination can occur . The test is limited in that it essentially has no tensile component and it is not quantitative . In addition , it ... Strength Dielectric strength ( leakage current ) for a 88.
... strength of the interface , then delamination can occur . The test is limited in that it essentially has no tensile component and it is not quantitative . In addition , it ... Strength Dielectric strength ( leakage current ) for a 88.
Page 93
... strength , and delamination ( see middle example , Fig . 2 ) . This precludes the use of the Ambient Pressure Aerogel ( APA ) approach which uses surface modification to allow gel shrinkage during drying but enables springback to yield ...
... strength , and delamination ( see middle example , Fig . 2 ) . This precludes the use of the Ambient Pressure Aerogel ( APA ) approach which uses surface modification to allow gel shrinkage during drying but enables springback to yield ...
Page 97
... strength . The steps illustrated in Figure 10 yield a continuous drop in surface area and increase in pore size . The rate of aging may be accelerated by both thermal and chemical means . The time required to achieve maximum strength ...
... strength . The steps illustrated in Figure 10 yield a continuous drop in surface area and increase in pore size . The rate of aging may be accelerated by both thermal and chemical means . The time required to achieve maximum strength ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber